taiyangnews 02月27日
Ideal Deposition: Spatial Atomic Layer Growth In Perovskite Cell Fabrication
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本文介绍了原子层沉积(ALD)和空间原子层沉积(SALD)两种薄膜沉积技术。ALD技术通过顺序暴露基底于前驱体中,实现原子级别的薄膜生长,具有生长致密、无针孔和保形薄膜的优点,但工艺步骤耗时较长。SALD技术则是ALD的一种变体,通过空间而非时间分离前驱体,无需清洗步骤,提高了沉积速率。Ideal Deposition公司提供研发级、试验级和量产级SALD设备,适用于玻璃、硅和柔性材料等基底,可沉积多种薄膜材料,沉积温度范围广。

🧪 ALD技术通过前驱体气体与基底的顺序反应,实现原子级薄膜生长,具有薄膜致密、无针孔、保形性好的优点。每个沉积周期只生长一个单分子层,清洗步骤防止前驱体混合,保证沉积均匀性。

🚀 SALD技术是ALD的变体,通过空间分离前驱体,无需清洗步骤,从而显著提高沉积速率。前驱体和惰性气体持续流向基底,惰性气体作为屏障,防止前驱体混合。

🏭 Ideal Deposition提供研发级、试验级和量产级SALD设备,适用于多种基底,可沉积SnOx、AlOx、ZnOx和NiOx等薄膜材料,沉积温度范围为80°C至300°C。研发级设备可在18分钟内完成20纳米厚涂层的沉积,不均匀性低于3%。

ALD deposition route

The ALD deposition process enables the growth of dense, pinhole-free, and conformal thin film layers at the atomic level through the sequential exposure of the substrate to precursors. In this layer-by-layer growth, the precursor gas first reaches the substrate, followed by an inert gas. The second precursor gas then reacts with the first precursor, which has been absorbed by the substrate, completing the deposition cycle. These substrate reactions are self-limiting, yielding one monolayer per cycle. The purging steps prevent the mixing of the precursors, which would otherwise reduce the uniformity of the deposition. The deposition cycle is repeated until the desired number of layers is attained, as explained by Wang. Although ALD deposition technology is widely acknowledged for its ability to deposit high-quality layers on silicon PV as well as on perovskite cells, the long process steps severely limit its throughput.

A variant of ALD, SALD features spatial rather than temporal separation of precursors, eliminating the need for purge steps and increasing the deposition rate compared to ALD. In the SALD process, both the precursor and the inert gas continuously flow toward the substrate, moving laterally relative to the shower height through multiple channels. Meanwhile, the introduction of the inert gas between the precursors acts as a barrier that prevents precursor intermixing and directs the precursor molecules toward the exhaust. Following the proper separation of precursors, which only react with the substrate or previously deposited layers in a layer-by-layer manner, the final deposition occurs, as stated by Wang.

The company offers 3 types of SALD tools: R&D level, pilot level, and mass-production level. These tools, suitable for substrates such as glass, silicon, and flexible materials, can deposit thin films of SnOx, AlOx, ZnOx, and NiOx, with deposition temperatures ranging from 80°C to 300°C. According to Wang, the R&D-level tool, compatible with substrate sizes up to 300 x 400 mm, can deposit a 20 nm thick coating with a nonuniformity of less than 3% in under 18 minutes per cycle. For pilot line and mass-production level tools, the maximum coating size can reach approximately 1.2 x 2.4 m, with a nonuniformity of less than 5%, added Wang.

Ideal Deposition’s SALD tool is equipped with a loading/unloading mechanism, load-lock-in (LLI), pre-heating chamber, process chamber, and load-lock-out (LLO) mechanism. This LLI and LLO process chamber serves as a barrier between the external atmospheric pressure and the vacuum pressure inside the tool.

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ALD SALD 薄膜沉积 原子层沉积 Ideal Deposition
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