未知数据源 2024年10月02日
Graphene switch combines logic and memory functions in a single device
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曼彻斯特大学的研究人员利用石墨烯创造了一种新型的电控开关装置,该装置同时支持存储和逻辑功能。该装置利用石墨烯能够传导质子和电子的特性,也可能用于涉及电极-电解质界面的应用,例如将二氧化碳还原为其组成化学物质。石墨烯是一种二维碳原子片,碳原子以蜂窝状六边形晶格排列。石墨烯的一个独特特性是,电子几乎以弹道速度自由地穿过该片的平面,使其成为比金属更好的导体。另一个有趣的特性是,当在该片的顶部和底部之间施加电场时,来自相邻聚合物或电解质的质子将垂直穿过它流动。然而,这些粒子的流动并非独立的。一些质子与电子结合,这种结合过程称为氢化,会产生缺陷,散射并减缓剩余的未结合电子。当结合电子的数量达到阈值时,材料将变为绝缘体。然后可以通过在石墨烯片的平面上施加电场来恢复材料的导电性,从而向其中注入更多电子。

🤔 **石墨烯的独特性质:** 石墨烯是一种二维碳原子片,具有非凡的特性。它能够以极快的速度传导电子,优于金属,并且可以传导质子。当电场施加时,质子会垂直穿过石墨烯片,与电子结合形成氢化,从而改变石墨烯的导电性。

💡 **独立控制质子和电子流动:** 研究人员通过利用石墨烯的质子和电子流动,在单个器件中首次实现了逻辑和存储功能。该装置由夹在质子传导电解质之间的微米级石墨烯层组成,电解质连接到器件顶部和底部的栅极电极。放置在器件边缘的附加电极使电子流过石墨烯片。这种结构使研究人员能够同时测量石墨烯片的平面电导率和质子在平面外方向渗透的程度。

🚀 **逻辑和存储功能的整合:** 研究人员通过利用石墨烯的导电或绝缘状态作为“存储”状态,演示了这种能力。同时,他们利用质子电流执行称为异或运算(XOR)的逻辑运算,当值为 1 的输入数量为奇数时,输出为“1”,否则输出为“0”。因此,当顶部和底部电极电压不同时,XOR 运算产生 1,并且流过强质子电流,而不会改变存储状态。

🔌 **未来的应用和可能性:** 由于该装置利用质子而不是电子,因此可能能够将这些装置与生物系统或电化学界面耦合。此外,这种效应可能在纳米流体、催化、电化学和表面科学等众多应用领域中引起兴趣。

🧠 **石墨烯开关的意义:** 该研究结果具有重要的意义,因为它证明了在单个器件中同时实现逻辑和存储功能是可能的。这可能为低成本模拟计算结构铺平道路,这些结构在质子上运行。它为计算平台提供了一种全新的方法,不需要硅,可以在非常简单且可能廉价的设备中实现。

Researchers at Manchester University in the UK have used graphene to make a new electrically-controlled switching device that supports both memory and logic functions. The device, which exploits graphene’s ability to conduct protons as well as electrons, might also be used in applications that involve an electrode-electrolyte interface, such as reducing carbon dioxide to its component chemical species.

Graphene is a two-dimensional sheet of carbon atoms arranged in a honeycomb-like hexagonal lattice. One unique property of graphene is that electrons move freely through the plane of this sheet at almost ballistic speeds, making it a better conductor than metals. Another fascinating property is that when an electric field is applied between the top and the bottom of the sheet, protons from an adjacent polymer or electrolyte will flow through it in a perpendicular direction.

These flows of particles are not independent, however. Some of the protons bind to the electrons, and this binding process, known as hydrogenation, produces defects that scatter and slow the remaining unbound electrons. When the number of bound electrons reaches a threshold, the material turns into an insulator. The material’s conductivity can then be restored by applying an electric field in the plane of the graphene sheet, injecting more electrons into it.

Controlling the movement of the electrons and protons independently

Researchers led by Marcelo Lozada-Hidalgo have now exploited these proton and electron flows to perform logic and memory operations in a single device for the first time. The device consists of a micron-scale graphene layer sandwiched between proton-conducting electrolytes that are connected to gate electrodes on the top and bottom of the device. Additional electrodes placed at the device’s edges induce electrons to flow through the graphene sheet. This arrangement allows the researchers to simultaneously measure the graphene sheet’s in-plane electrical conductivity and the degree to which protons permeate it in the out-of-plane direction.

Crucially (and unexpectedly, Lozada-Hidalgo says), the two-gate set-up also gave the researchers independent control over proton transport and the electron-proton binding that determines whether graphene is a conductor or an insulator. “We can drive proton transport without hydrogenating graphene or hydrogenate graphene without driving proton transport, or both,” he tells Physics World.

The source of this independent control, he explains, is that both hydrogenation and proton transport depend on the electric field E and the charge density n of the graphene. Using a non-aqueous electrolyte allows both E and n to be extremely high, which effectively distorts the energy profile for these processes. And while E depends on the difference between the top and bottom gate voltages, n depends on their sum, making it possible to tune E and independently simply by altering the voltages. “Such control is impossible otherwise and is so robust and reproducible that we can exploit it to perform proton-based logic-and-memory operations in graphene,” Lozada-Hidalgo says.

A very different computing platform

In the latest study, which is published in Nature, the researchers demonstrated this capability by using the graphene layer’s conducting or insulating status as a “memory” state. At the same time, they used the proton current to perform a logic operation called the exclusive operation (XOR) that outputs a “1” when the number of inputs with a value of 1 is odd, and a “0” otherwise. Hence, when the top and bottom electrode voltages differed, the XOR operation yielded a 1, and a strong proton current flowed – without changing the state of the memory.

The fact that both logic and memory operations occur in the same device is significant, Lozada-Hidalgo says, because these functions are usually performed by separate circuit elements that are physically isolated from each other within a computer. This can lead to long data-transfer times and high power consumption. “Our work could perhaps enable low-cost analogue computing structures that operate on protons,” he says. “At the very least, it is a very different computing platform that does not require silicon and can be implemented in very simple and potentially cheap devices.”

The fact that it uses protons, rather than electrons as in conventional circuits, could also make it possible to couple these devices with biological systems or electrochemical interfaces, he adds.

“A host of application areas”

While the Manchester researchers have so far only demonstrated these processes in graphene, they say that any 2D crystal could be studied in this way. “This represents a great opportunity for investigating electrode-electrolyte interfaces in a large group of materials and over a parameter space that is inaccessible in classical interfaces,” Lozada-Hidalgo says.

As well as memory-logic devices, he adds, the effect could be of interest in “a host of application areas”, including nanofluidics, catalysis, electrochemistry and surface science. “It’s a new technological capability in our discipline,” he says. “The electrochemical processes at play can be linked to the electronic properties of the 2D crystals because they can induce conductor-insulator phase transitions or strongly dope the materials and their heterostructures. We are looking into these possibilities now.”

The post Graphene switch combines logic and memory functions in a single device appeared first on Physics World.

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石墨烯 逻辑 存储 开关 纳米技术
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