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New Approaches Reduce Efficiency Losses In TOPCon Production
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本文介绍了TOPCon电池技术领域的两个新兴趋势:边缘钝化和背面多晶硅指。边缘钝化旨在消除切割电池产生的缺陷带来的性能损失,通过在切割边缘精确应用钝化层来实现。背面多晶硅指则通过在电池背面采用局部多晶硅指状结构,减少寄生吸收,提高双面率。Leadmicro推出了一种热处理和沉积工具平台,支持TOPCon的半片电池处理,进一步提升效率。这些技术进步共同推动了TOPCon电池效率的提升。

🔪边缘钝化技术:通过原子层沉积(ALD)在激光切割边缘沉积氧化铝薄膜,中和切割造成的缺陷,减少复合中心,从而降低性能损失。不同设备供应商和制造商宣称,根据基线工艺的不同,效率增益在0.1%到0.3%之间。

🔥Leadmicro的热处理和沉积平台:该平台支持TOPCon电池的半片处理,直接优势是消除了边缘损失。此外,它还有助于提高上游硅锭的利用率,并支持减少晶圆厚度的努力。

🖐背面多晶硅指:灵感来源于背接触电池设计,通过激光烧蚀背面钝化叠层,在非接触区域去除氧化硅和掺杂多晶硅,仅在接触区域保留。这种方法减少了背面多晶硅层的寄生吸收,将双面率从80%提高到85%,并有可能将整体电池效率提高0.1%到0.2%。

☀️双面多晶硅:部分公司尝试在正面也应用多晶硅指,优化接触形成、钝化和体材料特性。浆料制造商正在积极开发专为双面多晶硅应用设计的新型浆料。

Edge passivation is an emerging trend in the TOPCon area. The aim with this approach is to eliminate the undesired losses that originate from cutting cells in half or, as a matter of fact, several pieces as and when required. For some background, cutting a fully processed cell in half creates defects along the cut corners. These defects act as recombination centers, possibly leading to slight performance losses. The edge passivation neutralizes these defects and eliminates the losses. In the process, the passivation layers are precisely applied to the cut edges without undesirable effects on the cell surface. The process is only relevant to TOPCon, as HJT has long adapted to processing half cells all along the line. Being a batch process, TOPCon is not exactly compatible with half-wafer processing. During the process, an aluminum oxide film is applied on the laser-cut edges using ALD. Most leading equipment makers, including Laplace, Leadmicro, and Ideal Energy, among others, are offering edge passivation tools. Depending on the baseline process, different tool vendors and manufacturers have announced an efficiency gain ranging from 0.1% to 0.3%.

On the other hand, a particularly interesting development is that Leadmicro has introduced a thermal and deposition tool platform capable of supporting half-cell processing for TOPCon. The most immediate benefit is the elimination of edge losses. Additionally, this approach improves ingot utilization upstream and supports efforts to reduce wafer thickness (see UVID In TOPCon: Leadmicro’s Perspective).

Rear Poly-Fingers

Another important trend that is catching up quickly among the TOPCon suppliers is rear poly-fingers. Localized rear fingers is a concept inspired by back-contact cell designs, where polysilicon is applied in a fingered pattern on the rear side. The process involves laser ablation of the rear passivation stack in non-contact regions, meaning the stack of silicon oxide and doped polysilicon is etched off in all open areas on the cell’s rear side except where the contacts are applied. The technology can benefit from the laser tool ecosystem developed for back-contact cells. Indeed, several mainstream equipment vendors in China, most recently Laplace, have also started developing such laser tools. This approach reduces the parasitic absorption of poly-layers on the rear side, improving the bifaciality from 80% to 85%. These localized rear fingers have the potential to improve the overall cell efficiency from 0.1% to 0.2% absolute.

Although front-side localized poly could theoretically provide further benefits, its implementation is far more complex due to alignment challenges and the sensitivity of front-side emitters, which increases the risk of shunting and defects. The introduction of laser-induced metallization (LIM) has already significantly reduced front-side recombination, making localized poly less attractive. Additionally, applying poly fingers on the rear side provides greater tolerance in patterning, making it easier to implement. However, this is not unanimous, and the jury is still out.

Despite these challenges, a few companies have bifacial poly, essentially implementing poly-fingers also on the front side. This approach also includes optimization of contact formation, passivation, and bulk properties. Paste manufacturers are actively developing new pastes specifically designed for bifacial poly applications.

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TOPCon 边缘钝化 背面多晶硅指 半片电池 双面电池
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