未知数据源 2024年10月02日
‘Kink states’ regulate the flow of electrons in graphene
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美国宾夕法尼亚州立大学的研究人员开发出一种新型开关,能让电子在同一路径中沿相反方向传播且不碰撞。该开关通过控制伯纳尔双层石墨烯中所谓的拓扑扭结态实现,可能为量子信息传输带来更好的方法。伯纳尔双层石墨烯由两层原子级薄的碳层堆叠而成,具有特殊电子行为。研究人员通过将石墨和六方氮化硼结合的结构,创造出拓扑绝缘体,使电子在特殊路径中无散射传播,且该开关在温度升高时仍能保持量子化的扭结态。

🧐伯纳尔双层石墨烯由两层原子级薄的碳层堆叠且稍作偏移构成,产生多种特殊电子行为,如量子谷霍尔效应,其中不同谷中的电子沿相反方向流动,可通过操控谷的分布改变电子在材料中的流动。

🎯宾夕法尼亚州立大学物理学家Jun Zhu带领的研究团队,将石墨和二维材料六方氮化硼(hBN)制成的堆叠结构作为全球“门”,该结构无杂质,是团队技术进步的关键,此结构形成拓扑绝缘体,使电子在边缘或表面良好导电,内部绝缘,电子在边缘态中只能沿一条路径传播,无反向散射。

💡研究人员将电子限制在特殊的、拓扑保护的导电路径——扭结态中,通过控制这些态的存在与否,可调节系统中电子的流动。且令人惊讶的是,即使将系统温度从近绝对零度升高到50K,扭结态的量子化仍持续存在,这对实际应用很重要。

A new type of switch sends electrons propagating in opposite directions along the same paths – without ever colliding with each other. The switch works by controlling the presence of so-called topological kink states in a material known as Bernal bilayer graphene, and its developers at Penn State University in the US say that it could lead to better ways of transmitting quantum information.

Bernal bilayer graphene consists of two atomically-thin sheets of carbon stacked on top of each other and shifted slightly. This arrangement gives rise to several unusual electronic behaviours. One such behaviour, known as the quantum valley Hall effect, gets its name from the dips or “valleys” that appear in graphs of an electron’s energy relative to its momentum. Because graphene’s conduction and valence bands meet at discrete points (known as Dirac points), it has two such valleys. In the quantum valley Hall effect, the electrons in these different valleys flow in opposite directions. Hence, by manipulating the population of the valleys, researchers can alter the flow of electrons through the material.

This process of controlling the flow of electrons via their valley degree of freedom is termed “valleytronics” by analogy with spintronics, which uses the internal degree of freedom of electron spin to store and manipulate bits of information. For valleytronics to be effective, however, the materials the electrons flow through need to be of very high quality. This is because any atomic defects can produce intervalley backscattering, which causes electrons travelling in opposite directions to collide with each other.

A graphite/hBN global gate

Researchers led by Penn State physicist Jun Zhu have now succeeded in producing a device that is pristine enough to support such behaviour. They did this by incorporating a stack made from graphite and a two-dimensional material called hexagonal boron nitride (hBN) into their design. This stack, which acts as a global “gate” that allows electrons to flow through the device, is free of impurities, and team member Ke Huang explains that it was key to the team’s technical advance.

The principle behind the improvement is that while graphite is an excellent electrical conductor, hBN is an insulator. By combining the two materials, Zhu, Huang and colleagues created a structure known as a topological insulator – a material that conducts electricity very well along its edges or surfaces while acting as an insulator in its bulk. Within the edge states of such a topological insulator, electrons can only travel along one pathway. This means that, unlike in a normal conductor, they do not experience backscatter. This remarkable behaviour allows topological insulators to carry electrical current with near-zero dissipation.

In the present work, which is described in Science, the researchers confined electrons to special, topologically protected electrically conducting pathways known as kink states that formed by electrically gating the stack. By controlling the presence or absence of these states, they showed that they could regulate the flow of electrons in the system.

A quantized resistance value

“The amazing thing about our devices is that we can make electrons moving in opposite directions not collide with one another even though they share the same pathways,” Huang says. “This corresponds to the observation of a quantized resistance value, which is key to the potential application of the kink states as quantum wires to transmit quantum information.”

Importantly, this quantization of the kink states persists even when the researchers increased the temperature of the system from near absolute zero to 50 K. Zhu describes this as surprising because quantum states are fragile, and often only exist at temperatures of a few Kelvin. Operation at elevated temperatures will, of course, be important for real-world applications, she adds.

The new switch is the latest addition to a group of kink state-based quantum electronic devices the team has already built. These include valves, waveguides and beamsplitters. While the researchers admit that they have a long way to go before they can assemble these components into a fully functioning quantum interconnect system, they say their current set-up is potentially scalable and can already be programmed to direct current flow. They are now planning to study how electrons behave like coherent waves when travelling along the kink state pathways. “Maintaining quantum coherence is a key requirement for any quantum interconnect,” Zhu tells Physics World.

The post ‘Kink states’ regulate the flow of electrons in graphene appeared first on Physics World.

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新型开关 伯纳尔双层石墨烯 拓扑绝缘体 量子信息传输
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